Vishay Introduces 600 V Power MOSFET Designed for Power Conversion Applications
Vishay Unveils SiHR080N60E: A Game-Changer for High-Efficiency Power Conversion
BonChip Electronics, a trusted distributor of Vishay Intertechnology products, is excited to announce the availability of the SiHR080N60E, a groundbreaking 600 V E Series power MOSFET. This innovative device from Vishay Siliconix ushers in a new era of efficiency and power density for applications in telecom, industrial, and computing sectors.
Enhanced Efficiency and Power Density
The SiHR080N60E boasts significant improvements over previous-generation devices:
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27% Lower On-Resistance: This translates to reduced energy losses during conduction, enhancing overall system efficiency.
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60% Reduction in Resistance Times Gate Charge (FOM): This key metric signifies superior switching performance, leading to lower switching losses and further efficiency gains.
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Smaller Footprint with Higher Current Capability: The SiHR080N60E utilizes the new PowerPAK 8 x 8LR package, offering a 50.8% smaller footprint and a 66% lower profile compared to the D²PAK package. Despite its compact size, the SiHR080N60E delivers 46% higher current at the same on-resistance level, enabling significant power density improvements.
Advanced Thermal Management
The SiHR080N60E prioritizes thermal performance:
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Top-Side Cooling PowerPAK 8 x 8LR Package: This innovative package design allows for efficient heat dissipation, contributing to lower operating temperatures and improved device reliability.
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Extremely Low Thermal Resistance: The SiHR080N60E offers a junction-to-case thermal resistance of just 0.25 °C/W, enabling cooler operation and supporting higher current loads.
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Gullwing Leads: These leads enhance the package's ability to withstand temperature cycling, ensuring long-term reliability.
Unmatched Efficiency and Switching Performance
Built on Vishay's cutting-edge E Series super junction technology, the SiHR080N60E delivers exceptional electrical characteristics:
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Low On-Resistance: At 0.074 Ω at 10 V, the SiHR080N60E minimizes conduction losses.
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Ultra-Low Gate Charge: Down to 42 nC, this feature contributes to reduced switching losses and improved efficiency, particularly in power systems exceeding 2 kW.
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Industry-Leading FOM: The combination of low on-resistance and gate charge results in an FOM of 3.1 Ω*nC, a benchmark for efficiency in 600 V MOSFETs.
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Low Effective Output Capacitances: Co(er) of 79 pF and Co(tr) of 499 pF minimize switching losses in hard-switched topologies like PFC, half-bridge, and two-switch forward designs.
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Kelvin Source Connection: The package incorporates a Kelvin source connection, further optimizing switching efficiency.
Robustness and Environmental Responsibility
The SiHR080N60E prioritizes reliability and environmental consciousness:
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RoHS-Compliant and Halogen-Free: The device adheres to stringent environmental regulations.
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Guaranteed Avalanche Capability: The SiHR080N60E can withstand voltage transients in avalanche mode, ensuring robust operation.
Ideal Applications
The SiHR080N60E's exceptional efficiency, power density, and robust features make it ideal for a wide range of applications, including:
- Servers, Edge Computing, Supercomputers, and Data Storage
- UPS Systems
- High-Intensity Discharge (HID) Lamps and Fluorescent Ballast Lighting
- Telecom SMPS (Switch-Mode Power Supplies)
- Solar Inverters
- Welding Equipment
- Induction Heating
- Motor Drives
- Battery Chargers
BonChip Electronics: Your Partner for Vishay SiHR080N60E
As a leading distributor of Vishay Intertechnology products, BonChip Electronics is proud to offer the SiHR080N60E power MOSFET and a comprehensive selection of advanced power conversion solutions. Our team of experts is dedicated to assisting you in selecting the optimal components to meet your specific design requirements. Contact BonChip Electronics today to learn more about how the SiHR080N60E can revolutionize the efficiency and power density of your next power conversion project.
